LAUSR

Flexible electronic technology has attracted great attentions due to its wide range of potential applications in the fields of healthcare, robotics and artificial intelligence, etc. In this letter, we have successfully fabricated flexible AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) arrays through a low damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the Id,max achieving 290 mA/mm at Vgs = +2 V and the gm,max reaching to 40 mS/mm. The piezotronic effect provides a new freedom to optimize device performances, and flexible HEMTs can endure larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of the flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potentials in human-machine interface, intelligent micro-inductor system, and active sensors, etc, and open a new window to sensing or feedback external mechanical stimuli and so on.