LAUSR

Silicon inverted pyramid (IP) structures, with lower reflectance and increased surface recombination, are one of the best choices for light-trapping structures of high-efficiency silicon solar cells. The solution process of IP generally goes through three main steps: porous silicon etched by metal-assisted chemical etching, acid etching, and alkali anisotropic etching. In this paper, the role that acid modification plays in IP preparation and the application of our optimized texture for passivated emitter and rear solar cells (PERC) were investigated. Experimental results show that acid plays a decisive role in optimizing and modifying the morphology of porous silicon; thus, the morphology of porous silicon has no direct influence on the morphology of IP. In addition, the opening size of IP is mainly determined by the size of silicon micron holes modified by the acid process. PC1D simulation results manifest that IPs can increase the short-circuit current density (Jsc) of devices by 1.04 mA/cm2 and power conversion efficiency by 0.55%; hence, our optimized IP-based PERC achieve the highest simulative conversion efficiency of 23.21%. This is an effective and important way to manipulate the structure of IP, which points out the direction of fabrication and application of high-efficiency IP textures.