Monolayered tungsten dichalcogenide quantum dots (WS2 QDs) have various potential applications due to their large spin–valley coupling and excellent photoluminescence (PL) properties. What is expected is that with the decrease… Click to show full abstract
Monolayered tungsten dichalcogenide quantum dots (WS2 QDs) have various potential applications due to their large spin–valley coupling and excellent photoluminescence (PL) properties. What is expected is that with the decrease in lateral size of QDs, the stronger quantum confinement effect will dramatically strengthen the spin–valley coupling and widen the band gap. However, ultrasmall monolayered WS2 QDs prepared by ion intercalation unavoidably undergo the problem of structural defects, which will create defect levels and significantly change their properties. In this study, we report that by annealing defective monolayered WS2 QDs in sulfur vapor, pristine monolayered WS2 QDs with an ultrasmall lateral size of ca. 1.8–3.8 nm can be obtained. The results show that the ultrasmall monolayered WS2 QDs exhibit a giant spin–valley coupling of ca. 821 meV. Moreover, the pristine ultrasmall monolayered WS2 QDs show purple PL centered at 416 nm, and the defect PL peaks in defective WS2 QDs can be effectively removed by annealing. All of these results afford the ultrasmall monolayered QDs various applications such as in optoelectronics, spintronics, valleytronics, and so on.
               
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