LAUSR

With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a significant level of flexibility and performance. This is mainly due to the scarcity of flexible dielectric materials with insulating properties sufficient for a flash memory, which involves dual dielectric layers, respectively, responsible for tunneling and blocking of charges. Here we report ultra-flexible organic flash memories based on polymer dielectrics prepared by initiated chemical vapor deposition. Using their near-ideal dielectric characteristics, we demonstrate flash memories bendable down to a radius of 300 μm that exhibits a relatively long-projected retention with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates, such as papers, to demonstrate its feasibility in a wide range of applications.Flexible flash memory is crucial to modern electronics, but its fabrication is challenging in the absence of suitable dielectric materials. Here, Lee et al. realize organic memory with retention over 10 years using tunneling and blocking dielectric layers prepared by initiated chemical vapor deposition.