LAUSR

The diffusion of defects in crystalline materials 1 controls macroscopic behaviour of a wide range of processes, including alloying, precipitation, phase transformation and creep 2 . In real materials, intrinsic defects are unavoidably bound to static trapping centres such as impurity atoms, meaning that their diffusion is dominated by de-trapping processes. It is generally believed that de-trapping occurs only by thermal activation. Here, we report the direct observation of the quantum de-trapping of defects below around one-third of the Debye temperature. We successfully monitored the de-trapping and migration of self-interstitial atom clusters, strongly trapped by impurity atoms in tungsten, by triggering de-trapping out of equilibrium at cryogenic temperatures, using high-energy electron irradiation and in situ transmission electron microscopy. The quantum-assisted de-trapping leads to low-temperature diffusion rates orders of magnitude higher than a naive classical estimate suggests. Our analysis shows that this phenomenon is generic to any crystalline material. Quantum-assisted de-trapping in tungsten leads to diffusion rates orders of magnitude higher than naive classical estimates suggest. This phenomenon may be generic to any crystalline material.