LAUSR

The engineering of cooling mechanisms is a bottleneck in nanoelectronics. Thermal exchanges in diffusive graphene are mostly driven by defect-assisted acoustic phonon scattering, but the case of high-mobility graphene on hexagonal boron nitride (hBN) is radically different, with a prominent contribution of remote phonons from the substrate. Bilayer graphene on a hBN transistor with a local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease in the carrier density and Zener–Klein tunnelling (ZKT) at high bias. Using noise thermometry, we show that the ZKT triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons in hBN by out-of-equilibrium electron–hole pairs beyond the super-Planckian regime. The combination of ZKT transport and hyperbolic phonon polariton cooling renders graphene on BN transistors a valuable nanotechnology for power devices and RF electronics.Boron-nitride-supported graphene transistors show prominent current and noise temperature saturation due to hyperbolic phonon emission by non-equilibrium electron–hole pairs.