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Enhancement of interlayer exchange in an ultrathin two-dimensional magnet

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Following the recent isolation of monolayer CrI3 (ref. 1), many more two-dimensional van der Waals magnetic materials have been isolated2–12. Their incorporation in van der Waals heterostructures offers a new… Click to show full abstract

Following the recent isolation of monolayer CrI3 (ref. 1), many more two-dimensional van der Waals magnetic materials have been isolated2–12. Their incorporation in van der Waals heterostructures offers a new platform for spintronics5–9, proximity magnetism13 and quantum spin liquids14. A primary question in this field is how exfoliating crystals to the few-layer limit influences their magnetism. Studies of CrI3 have shown a different magnetic ground state for ultrathin exfoliated films1,5,6 compared with the bulk, but the origin is not yet understood. Here, we use electron tunnelling through few-layer crystals of the layered antiferromagnetic insulator CrCl3 to probe its magnetic order and find a tenfold enhancement of the interlayer exchange compared with bulk crystals. Moreover, temperature- and polarization-dependent Raman spectroscopy reveals that the crystallographic phase transition of bulk crystals does not occur in exfoliated films. This results in a different low-temperature stacking order and, we hypothesize, increased interlayer exchange. Our study provides insight into the connection between stacking order and interlayer interactions in two-dimensional magnets, which may be relevant for correlating stacking faults and mechanical deformations with the magnetic ground states of other more exotic layered magnets such as RuCl3 (ref. 14). Few-layer magnetic materials sometimes show a different form of magnetism from their thicker equivalents. The authors contend that the mechanism is changes in the stacking order in the thin limit that modify the interlayer exchange interaction.

Keywords: order; two dimensional; interlayer exchange; exchange; enhancement interlayer

Journal Title: Nature Physics
Year Published: 2019

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