Hotspot relaxation time (τth) is one of the essential parameter which defines the maximum count rate of superconducting nanowire single-photon detectors (SNSPDs). We studied the τth for NbN-based SNSPDs on… Click to show full abstract
Hotspot relaxation time (τth) is one of the essential parameter which defines the maximum count rate of superconducting nanowire single-photon detectors (SNSPDs). We studied the τth for NbN-based SNSPDs on various substrates using the two-photon detection method based on the pump-probe spectroscopy technique. We observed that τth strongly increased with increasing bias current in the two-photon detection regime. In addition, the minimum hotspot relaxation time (τth)min was not significantly affected by the bath temperature; this is different from the previous observations reported for WSi SNSPDs. In addition, a strong dependency of (τth)min on the substrate was found. The minimum (τth)min was 11.6 ps for SNSPDs made of 5.5-nm-thick NbN on MgO (100), whereas the maximum (τth)min was 34.5 ps for SNSPDs made of 7.5-nm-thick NbN on Si (100). We presented a direct correlation between the values of τth and degrees of disorder of NbN films grown on different substrates.
               
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