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Enhancement of silicon modulating properties in the THz range by YAG-Ce coating

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Y 3 Al 5-x Ga x O 12 :Ce 3+ ,V 3+ (YAG:Ce) has excellent chemical stability and unprecedented luminous efficiency. Its strong photoresponsive property is thoroughly utilized in designing… Click to show full abstract

Y 3 Al 5-x Ga x O 12 :Ce 3+ ,V 3+ (YAG:Ce) has excellent chemical stability and unprecedented luminous efficiency. Its strong photoresponsive property is thoroughly utilized in designing excellent optical information storage device. Here, the remarkable photoconductivity of YAG:Ce is exploited to demonstrate a hybrid YAG:Ce-silicon device that shows high speed terahertz wave spatial modulation. A wide terahertz spectra modulation is observed under different pump powers in frequency range from 0.2 to 1.8 THz. Furthermore, a dynamic control of the terahertz wave intensity is also observed in the transmission system. The modulation speed and depth of the device is measured to be 4 MHz (vs 0.2 kHz)and 83.8%(vs50%) for bare silicon, respectively. The terahertz transmission spectra exhibits highly efficiency terahertz modulation by optically pumping a YAG:Ce film on silicon with low optical pump fluence.

Keywords: modulation; enhancement silicon; modulating properties; silicon modulating; silicon; yag

Journal Title: Scientific Reports
Year Published: 2020

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