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A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance. Click to show full abstract
A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
Keywords:
power transistors;
multi channel;
channel power;
geometry;
transistors shape
Journal Title: Nature Electronics
Year Published: 2019
Link to full text (if available)
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Journal Title: Nature Electronics
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!