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To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth… Click to show full abstract
To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).
Keywords:
dimethylamino propoxide;
oxide films;
atomic layer;
layer deposition;
bis dimethylamino
Journal Title: Dalton transactions
Year Published: 2017
Link to full text (if available)
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Journal Title: Dalton transactions
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!