CdTe films were electrochemically deposited from an alkaline solution with the assistance of nitrilotriacetic acid (NTA) and tetramethylammonium hydroxide (TMAH). CdTe film prepared at the complexing ratio of 14 : 1 was… Click to show full abstract
CdTe films were electrochemically deposited from an alkaline solution with the assistance of nitrilotriacetic acid (NTA) and tetramethylammonium hydroxide (TMAH). CdTe film prepared at the complexing ratio of 14 : 1 was well-crystallized and highly (111)-oriented; after annealing, it was free of voids with good interface contact. The deposition is demonstrated to occur via UPD mechanism. TMAH prevented the introduction of alkaline metal ions into CdTe films. This provides a novel approach for depositing CdTe films at the lower temperature.
               
Click one of the above tabs to view related content.