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Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

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Chemical capacitance measurements are used to study the defect chemistry of La0.6Sr0.4FeO3–δ thin films and their polarization (η) and pO2 dependence. Important point defects are oxygen vacancies (), electrons (e′)… Click to show full abstract

Chemical capacitance measurements are used to study the defect chemistry of La0.6Sr0.4FeO3–δ thin films and their polarization (η) and pO2 dependence. Important point defects are oxygen vacancies (), electrons (e′) and holes (h˙).

Keywords: capacitance measurements; thin films; chemical capacitance; chemistry; defect chemistry

Journal Title: Physical Chemistry Chemical Physics
Year Published: 2018

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