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Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer

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The immobilization of glucose oxidase (GOx) on indium-gallium zinc oxide (IGZO) thin films is studied in order to fabricate a high performance biosensor. An amine functionalized layer, using (3-aminopropyl)triethoxysilane (APTES),… Click to show full abstract

The immobilization of glucose oxidase (GOx) on indium-gallium zinc oxide (IGZO) thin films is studied in order to fabricate a high performance biosensor. An amine functionalized layer, using (3-aminopropyl)triethoxysilane (APTES), is employed to support the immobilization and to achieve a qualified silanization layer. Fourier Transform Infrared (FT-IR) Spectroscopy, Atomic Force Microscopy (AFM), and contact angle measurements were performed to analyze the surface characteristics and to investigate a deposition mechanism for APTES with varying concentrations. Finally, GOx is immobilized on the APTES layer to determine how a diverse surface quality influences GOx density, and its enzymatic activity is identified by the detection of the electrical signal from glucose biosensors.

Keywords: enzyme immobilization; amine functionalized; immobilization; immobilization metal; layer; functionalized layer

Journal Title: RSC Advances
Year Published: 2017

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