LAUSR

Ag-NPs doped NiFe2O4 (NFO) thin films have been synthesized by the chemical solution deposition method. The effect of Ag-NPs incorporation on the resistive switching (RS) properties of NFO films with different doping concentrations in the range of 0 to 1.0% Ag was investigated. Results show that Ag-NPs doped NFO based memory devices perform resistive switching with much better uniformity and repeatability in switching cycles, and have excellent reliability at an appropriate Ag-NPs doping concentration (i.e. 0.5%) instead of very low and high doping concentrations (i.e. un-doped NFO film, 0.2% and 1.0% Ag). On the basis of analyses performed on current–voltage characteristics and their temperature dependence, it was found that the carrier transport occurred through the conducting filaments in the low resistance state with ohmic conduction, and in the high resistance state with Schottky emission. In addition, the temperature dependence of the resistance and magnetic behavior at HRS and LRS revealed that the physical origin of the RS mechanism, which involves the formation and rupture of the conducting paths, consists of oxygen vacancies and Ag atoms. Ag-NPs doping-induced changes in the saturation magnetization, associated with resistive switching, have been ascribed to variations in the oxygen vacancy concentration. The excellent endurance properties (>103 cycles), data retention (of >105 s at 298 and 358 K), and good cycle-to-cycle uniformity are observed in 0.5% Ag-NPs doped NFO-based memory devices.