The switchability of electrical properties has recently attracted much attention due to its potential applications in memory, sensors, and resistive switches. Here, a solution-phase synthesis of iron telluride nanostructures with… Click to show full abstract
The switchability of electrical properties has recently attracted much attention due to its potential applications in memory, sensors, and resistive switches. Here, a solution-phase synthesis of iron telluride nanostructures with reversible and reproducible switching behavior between p- and n-type conduction is demonstrated by a simple change of temperature without crystal structure changes. The transition temperature of FeTe2 to switch from p-type to n-type is strongly dependent on the original ratio of the precursors and sintering time. Further studies confirm that the switching is derived from the valence change effect and a proof-of-concept thermally triggered p-n diode has been demonstrated.
               
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