Photo by mbrunacr from unsplash
We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can… Click to show full abstract
We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved.
Keywords:
irradiation;
energy electron;
beam irradiation;
electron beam;
low energy
Journal Title: Nanoscale
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Nanoscale
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!