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An efficient process for thermal atomic layer deposition (ALD) of Ni film with high growth per cycle (GPC) value is developed in this study using an electron-rich compound (N,N,N',N'-tetramethylethylenediamine) (bis(2,4-pentanedionato))… Click to show full abstract
An efficient process for thermal atomic layer deposition (ALD) of Ni film with high growth per cycle (GPC) value is developed in this study using an electron-rich compound (N,N,N',N'-tetramethylethylenediamine) (bis(2,4-pentanedionato)) nickel(ii) and anhydrous hydrazine as the reactants. The thermal properties and adsorption behavior of selected compounds were studied. Significantly, a high film GPC value of 2.1 Å per cycle for ALD was achieved, and the deposited film exhibited high purity, low resistivity and a smooth surface. We believe that such an efficient method for high GPC thermal ALD of Ni and even other transition metals will benefit ALD technology development.
Journal Title: Nanoscale
Year Published: 2019
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