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We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors. Click to show full abstract
We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors.
Keywords:
zirconium oxide;
printed transistor;
temperature atomic;
inkjet printed;
low temperature;
zirconium
Journal Title: RSC Advances
Year Published: 2019
Link to full text (if available)
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Journal Title: RSC Advances
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!