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Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is… Click to show full abstract
Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.
Keywords:
oxide zn2geo4;
nanowire networks;
synthesis ternary;
zn2geo4 nanowire;
ternary oxide
Journal Title: RSC Advances
Year Published: 2019
Link to full text (if available)
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Journal Title: RSC Advances
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!