Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices. Click to show full abstract
Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.
               
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