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Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

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Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices. Click to show full abstract

Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.

Keywords: algan gan; interfacial coupling; strong interfacial; mgo algan; ferroelectric polarization

Journal Title: Journal of Materials Chemistry C
Year Published: 2019

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