"Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics"

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High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers. Click to show full abstract

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

Keywords: bottom gate; effect transistors; field effect; two dimensional

Journal Title: Journal of Materials Chemistry C
Year Published: 2019

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