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We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high… Click to show full abstract
We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al0.36In0.64N.
Keywords:
enable growth;
high crystal;
crystal quality;
al0 36in0;
layer buffer;
36in0 64n
Journal Title: CrystEngComm
Year Published: 2019
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Journal Title: CrystEngComm
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!