"Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates"

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Process diagram for achieving pure Ga-polar and site-controlled growth of n-GaN nanowires on conductive n-Si-AlN templates using MOVPE. Click to show full abstract

Process diagram for achieving pure Ga-polar and site-controlled growth of n-GaN nanowires on conductive n-Si-AlN templates using MOVPE.

Keywords: mask less; gan nanowires; less movpe; site; aln templates; movpe arrayed

Journal Title: CrystEngComm
Year Published: 2019

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