Heavily doped oxide semiconductors can be tailored for widespread application in near-infrared (NIR) and mid-infrared (mid-IR) wavelength ranges because of both functional and fabrication advantages. Here, the ultrafast and broadband… Click to show full abstract
Heavily doped oxide semiconductors can be tailored for widespread application in near-infrared (NIR) and mid-infrared (mid-IR) wavelength ranges because of both functional and fabrication advantages. Here, the ultrafast and broadband nonlinear saturable absorption of Al-doped zinc oxide nanocrystals (AZO NCs) is investigated by using the Z-scan technique and the pump-probe technique. The nonlinear absorption coefficient is as high as -1.90 × 103 cm GW-1 in the wide infrared (IR) wavelength range (from 800 to 3000 nm). Furthermore, a maximum optically induced refractive index of -1.85 × 10-1 cm2 GW-1 in the dielectric region and 2.09 × 10-1 cm2 GW-1 in the metallic region leads to an ultrafast nonlinear optical response (less than 350 femtoseconds). Mode-locked fiber lasers at 1064 nm and 1550 nm as well as Q-switched fiber lasers near 2000 nm and 3000 nm prove the use of employing AZO NCs as a broadband and ultrafast nonlinear optical device, which provides a valuable strategy and intuition for the development of nanomaterial-based photonic and optoelectronic devices in the NIR and mid-IR wavelength ranges.
               
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