A heterojunction of TiO2 grown on g-C3N4 particles is demonstrated using atomic layer deposition (ALD), equipped with a specifically designed rotary reactor for maintaining stable mechanical dispersion of g-C3N4 particles… Click to show full abstract
A heterojunction of TiO2 grown on g-C3N4 particles is demonstrated using atomic layer deposition (ALD), equipped with a specifically designed rotary reactor for maintaining stable mechanical dispersion of g-C3N4 particles during ALD.
               
Click one of the above tabs to view related content.