"Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition"

LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications. Click to show full abstract

Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications.

Keywords: prepared atomic; cationic compositional; thin film; atomic layer; layer deposition; compositional effects

Journal Title: Journal of Materials Chemistry C
Year Published: 2019

Link to full text (if available)

Share on Social Media: Sign Up to like & get
recommendations!
1

LAUSR

You are not signed in:

Sign Up!

Related content

More Information News Social Media Video Recommended