"High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes"

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Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates. Click to show full abstract

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

Keywords: quantum efficiency; internal quantum; zno znmgo; high internal; efficiency zno; quantum

Journal Title: Journal of Materials Chemistry C
Year Published: 2019

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