LAUSR

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si doping level, high-efficient AlGaN-based MQWs with internal quantum efficiency (IQE) greater than 80% at room temperature are realized with the emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents a single peak emission with the wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance.