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High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy

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N-polar GaN films (C, D, E, F) grown with varied V/III ratio show improved crystallinity and reduced impurity concentrations. Click to show full abstract

N-polar GaN films (C, D, E, F) grown with varied V/III ratio show improved crystallinity and reduced impurity concentrations.

Keywords: polar gan; varied iii; grown varied; films grown; gan films

Journal Title: RSC Advances
Year Published: 2020

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