LAUSR

Amorphous multi-element oxide films were grown using a facile temperature-controlled approach. The compact IMZO film was deposited and the size of voids formed in the film reduced greatly as compared with that of the pure ZnO film. The 5 nm-thick IMZO was patterned directly with the aid of a stencil mask and applied to a thin film transistor which afforded superior performance including a field effect mobility value of 26.67 cm2 V−1 s−1 and an Ion/Ioff ratio of 7.19 × 107. Nowadays, the physics based drain current model is in great demand for better circuit design. In this work, the accurate and continuous drain current description of as fabricated multi-element oxide devices was derived using a surface potential based model with a charge sheet approach. Considering the voltage losses applied to the electrode for the existence of the interface trap, the modification factors of voltage were effectively introduced for better fitting which assisted the analysis of electrical properties of active films.