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Small angle-neutron scattering was used to elucidate the current decay mechanism of synaptic field-effect transistors based on a polymer bulk p–n heterojunction. Click to show full abstract
Small angle-neutron scattering was used to elucidate the current decay mechanism of synaptic field-effect transistors based on a polymer bulk p–n heterojunction.
Keywords:
synaptic field;
bulk heterojunction;
effect transistors;
polymer bulk;
field effect;
decay
Journal Title: Journal of Materials Chemistry C
Year Published: 2021
Link to full text (if available)
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Journal Title: Journal of Materials Chemistry C
Year Published: 2021
Link to full text (if available)
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recommendations!