Solution-processed white organic light-emitting diodes (WOLEDs) have shown much lower device efficiency than their vacuum-deposited counterparts, due to the lack of triplet exciton management in a single-emissive-layer device structure, which… Click to show full abstract
Solution-processed white organic light-emitting diodes (WOLEDs) have shown much lower device efficiency than their vacuum-deposited counterparts, due to the lack of triplet exciton management in a single-emissive-layer device structure, which will induce triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA). Here, two kinds of solution-processed WOLEDs, including thermally activated delayed fluorescence (TADF)/phosphorescence hybrid WOLEDs and all-TADF WOLEDs, with high power efficiency are developed by using a high triplet energy level (T1) interfacial exciplex as a host and a high reverse intersystem crossing (RISC) rate TADF emitter as a blue dopant for triplet exciton management. The interfacial exciplex host with high T1 can ensure that triplet excitons transfer from the host to the blue emitter, and the blue TADF emitter with high RISC rate (1.15 × 107 s-1) can rapidly upconvert triplet excitons to singlet ones to avoid TTA and TPA. The solution-processed TADF/phosphorescence hybrid and all-TADF WOLEDs exhibit maximum external quantum efficiencies of 31.1% and 27.3%, together with maximum power efficiencies of 93.5 and 70.4 lm W-1, respectively, which are the record efficiencies for solution-processed WOLEDs, and quite comparable to those of most vacuum-deposited counterparts.
               
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