A hydrazone structure based polymer sandwiched memory device achieves a new high conductivity state after Z → E isomerization under 394 nm light due to the conformational change in the… Click to show full abstract
A hydrazone structure based polymer sandwiched memory device achieves a new high conductivity state after Z → E isomerization under 394 nm light due to the conformational change in the Ph1-E film.
               
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