The performance of semiconductor photocatalysts has been limited by rapid electron–hole recombination. One strategy to overcome this problem is to construct a heterojunction structure to improve the survival rate of… Click to show full abstract
The performance of semiconductor photocatalysts has been limited by rapid electron–hole recombination. One strategy to overcome this problem is to construct a heterojunction structure to improve the survival rate of electrons. In this context, a novel g-C3N4/TiO2/CuO double-heterojunction photocatalyst was developed and characterized. Its photocatalytic activity for hydrogen production from water–methanol photocatalytic reforming was explored. Methanol is always used to eliminate semiconductor holes. The g-C3N4/TiO2/CuO double-heterojunction photocatalyst with a narrow bandgap of ∼1.38 eV presented excellent photocatalytic activity for hydrogen evolution (97.48 μmol (g h)−1) under visible light irradiation. Compared with g-C3N4/TiO2 and CuO/TiO2, the photocatalytic activity of g-C3N4/TiO2/CuO for hydrogen production was increased approximately 7.6 times and 1.8 times, respectively. Below 240 °C, the sensitivity of g-C3N4/TiO2/CuO to ammonia was approximately 90% and 46% higher than that of g-C3N4/TiO2 and CuO/TiO2, respectively. The enhancement of the photocatalytic activity and gas sensing properties of the g-C3N4/TiO2/CuO composite resulted from the close interface contact established by the double heterostructure. The trajectory of electrons in the double heterojunction conformed to the S-scheme. UV-vis, PL, and transient photocurrent characterization showed that the double heterostructure effectively inhibited the recombination of e−/h+ pairs and enhanced the migration of photogenerated electrons.
               
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