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A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices. Click to show full abstract
A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices.
Keywords:
high electron;
gan high;
novel mode;
mode gan;
electron mobility;
mode
Journal Title: CrystEngComm
Year Published: 2023
Link to full text (if available)
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Journal Title: CrystEngComm
Year Published: 2023
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!