NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600K. For 100 µm diameter devices, the power figure of merit (VB)2/ RON, where RON is the on-state... Click to show full abstract
NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600K. For 100 µm diameter devices, the power figure of merit (VB)2/ RON, where RON is the on-state...
               
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