A combined computational and experimental study of La2SnO2S3 reveals carrier generation and compensation mechanisms associated with its moderate n-type conductivity, where hydrogen impurities and electron self-trapping play crucial roles. Click to show full abstract
A combined computational and experimental study of La2SnO2S3 reveals carrier generation and compensation mechanisms associated with its moderate n-type conductivity, where hydrogen impurities and electron self-trapping play crucial roles.
Keywords:
generation compensation;
compensation mechanism;
carrier generation
Journal Title: Journal of Materials Chemistry C
Year Published: 2024
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Journal of Materials Chemistry C
Year Published: 2024
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!