The charge trapping memory (CTM) boasts numerous advantages to replace conventional flash memory. In this work, atomic layer deposited Ta2O5-x nano-islands were employed as charge trapping units in Pt/Al2O3/Ta2O5-x nano-islands/Al2O3/Si... Click to show full abstract
The charge trapping memory (CTM) boasts numerous advantages to replace conventional flash memory. In this work, atomic layer deposited Ta2O5-x nano-islands were employed as charge trapping units in Pt/Al2O3/Ta2O5-x nano-islands/Al2O3/Si...
Keywords:
nano islands;
charge trapping;
atomic layer;
ta2o5 nano;
trapping memory
Journal Title: Journal of Materials Chemistry C
Year Published: 2024
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Journal Title: Journal of Materials Chemistry C
Year Published: 2024
Link to full text (if available)
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