This study investigates the structural, electrical, and optical properties of NiO thin films deposited by DC sputtering in an Ar/O2 atmosphere with varying oxygen concentrations. As the O2 content increases,… Click to show full abstract
This study investigates the structural, electrical, and optical properties of NiO thin films deposited by DC sputtering in an Ar/O2 atmosphere with varying oxygen concentrations. As the O2 content increases, energy-dispersive X-ray (EDX) analysis reveals a higher concentration of Ni vacancies and Ni3+ ions, resulting in lower resistivity and a slight reduction in crystal quality. Among the samples, the film grown at 50% oxygen (NiO-50) exhibits the best combination of properties for Surface-Enhanced Raman Spectroscopy (SERS), including balanced crystallinity, surface roughness, and high hole concentration. Current–voltage (I–V) measurements and Raman spectra using Rhodamine 6G (10−9 M) confirm that the SERS enhancement is driven by an electron transition mechanism. The calculated enhancement factor of 9.6 × 108 for the NiO/Si substrate surpasses previously reported values. These results position NiO-50 as a promising SERS-active material and provide insights into tuning NiO film properties for enhanced sensing applications.
               
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