By incorporating a spectrally selective absorber with self-cleaning properties into TE thin-film devices, the device demonstrates a high open-circuit voltage density of ∼10.4 mV cm−2 and an output power density… Click to show full abstract
By incorporating a spectrally selective absorber with self-cleaning properties into TE thin-film devices, the device demonstrates a high open-circuit voltage density of ∼10.4 mV cm−2 and an output power density of ∼2.5 mW cm−2.
Keywords:
highly integrated;
thin film;
integrated gete;
film thermoelectric;
gete thin;
film
Journal Title: Journal of Materials Chemistry A
Year Published: 2025
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Journal of Materials Chemistry A
Year Published: 2025
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!