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185─220 GHz wideband amplifier in 40 nm CMOS

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A 185–220 GHz four-stage differential wideband amplifier is presented. The bandwidth (BW) is significantly expended by using the coupled transmission line (CTL) technique and the staggered inter-stage wideband matching technique.… Click to show full abstract

A 185–220 GHz four-stage differential wideband amplifier is presented. The bandwidth (BW) is significantly expended by using the coupled transmission line (CTL) technique and the staggered inter-stage wideband matching technique. CTL is adopted due to its high self-resonant frequency, high simulation accuracy, compact layout and wide BW characteristics. The amplifier achieves a peak gain of 10.1 and 3 dB BW of 35 GHz ranging from 185 to 220 GHz. With a supply voltage of 0.9 V, the amplifier consumes a DC power of 54.5 mW. The amplifier occupies a core area of 500 × 250 μm2 in 40 nm CMOS.

Keywords: 185 220; wideband amplifier; 220 ghz

Journal Title: Electronics Letters
Year Published: 2018

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