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The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have… Click to show full abstract
The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
Keywords:
silicon carbide;
driver circuit;
circuit;
base;
carbide bipolar;
bipolar junction
Journal Title: Electronics Letters
Year Published: 2018
Link to full text (if available)
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Journal Title: Electronics Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!