LAUSR

A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n-Si and p-3C-SiC pillars (Si/SiC SJ IGBT) is studied. At the on-state, the n-Si/p-SiC heterojunction acts as a barrier for holes in the n-Si pillar, which helps to enhance the carrier-storage effect in the n-Si pillar and improves the tradeoff between turn-off loss ( E off ) and on-state voltage drop ( V CE(sat) ). It is found by simulations that V CE(sat) of the Si/SiC SJ IGBT can be 0.35 V lower than that of the conventional SJ IGBT with the same breakdown voltage ( V B = 1450 V). Under E off = 5 mJ/cm 2 , V CE(sat) of the Si/SiC SJ IGBT is 1.22 V, which is 0.30 and 0.81 V lower than V CE(sat) of the conventional SJ IGBT and the field stop IGBT, respectively.