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The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be… Click to show full abstract
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
Keywords:
application;
conductance modulation;
oxram conductance;
contrast
Journal Title: Electronics Letters
Year Published: 2020
Link to full text (if available)
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Journal Title: Electronics Letters
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!