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Thermodynamic processes on a semiconductor surface during in‐situ multi‐beam laser interference patterning

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Laser interference has been widely used to produce one-dimensional gratings and more recently has shown great potential for two-dimensional patterning. In this study, the authors examine by simulation, its application… Click to show full abstract

Laser interference has been widely used to produce one-dimensional gratings and more recently has shown great potential for two-dimensional patterning. In this study, the authors examine by simulation, its application to in-situ patterning during materials growth. To understand the potential, it is important to study the surface processes resulting from the laser–matter interaction, which have a key influence on the resulting growth mechanisms. In this work, the intensity distribution and the laser–semiconductor interaction resulting from four-beam interference patterns are analysed by numerical simulations. In particular, the authors derive the time and spatially dependent thermal distribution along with the thermal-induced desorption and surface diffusion. The results provide a crucial understanding of the light-induced thermal profile and show that the surface temperature and the surface adatom kinetics can be controlled by multi-beam pulsed laser interference patterning due to photothermal reactions. The approach has potential as an in-situ technique for the fast and precise nanostructuring of semiconductor material surfaces.

Keywords: semiconductor; surface; interference; beam; laser interference

Journal Title: IET Optoelectronics
Year Published: 2019

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