LAUSR

The solution route deposition method will reduce the fabrication cost, and it is compatible with existing Si technology. Here, we systematically investigate the impact of annealing temperature on the electrical and dielectric properties along with the band alignment of HfO2 thin films with silicon. The films were fabricated using the hafnium isopropoxide adduct precursor, which is environment friendly and non-toxic in ambient conditions. We have analyzed the band alignment of HfO2/Si stack by using ultra-violet photoelectron spectroscopic and current-voltage (J-V) plot to understand its impact on electrical transport. The bandgap of HfO2 films estimated from Plasmon energy loss spectra is 5.9 eV. The composition analysis is done with X-ray photoelectron spectroscopy that suggests a good stoichiometric ratio of 1:1.96. The atomic force microscopy studies display a smooth surface with the roughness of 1.4 A without any cracks in the films. It is found that the current conduction mechanisms and barrier heigh...