LAUSR

In magnetic random access memory, free layers are used to store data bits as “0” or “1.” For free layers with slotted nanoring structures, the magnetization configuration of counterclockwise vortex state can be defined as “0” state, while clockwise vortex state as “1” state. It is important to have a controllable and stable state transition process to make sure that “0” state can switch to “1” state and vice versa. Up to now, it has seldom been reported that the transition process is heavily affected by the static anisotropy field Hk-stat of free layers. A sufficient Hk-stat will substantially reduce the probability of successful state transition. To increase the accuracy of writing data, the free layers must be prepared with a low anisotropy field. In this paper, we present a rotational sputtering method, which can finish the desired isotropic film preparation, and thus realize a stable state transition.