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An approach utilizing low energy N ion beam irradiation is applied in joining two monolayer graphene flakes. Raman spectrometry and atomic force microscopy show the joining signal under 40 eV and… Click to show full abstract
An approach utilizing low energy N ion beam irradiation is applied in joining two monolayer graphene flakes. Raman spectrometry and atomic force microscopy show the joining signal under 40 eV and 1 × 1014 cm−2 N ion irradiation. Molecular dynamics simulations demonstrate that the joining phenomenon is attributed to the punch-down effect and the subsequent chemical bond generation between the two sheets. The generated chemical bonds are made up of inserted ions (embedded joining) and knocked-out carbon atoms (saturation joining). The electronic transport properties of the joint are also calculated for its applications.
Journal Title: Applied Physics Letters
Year Published: 2017
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