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The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers… Click to show full abstract
The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial- and vacancy-related centers are also clearly presented and discussed.
Journal Title: Applied Physics Letters
Year Published: 2017
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